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Christopher Jost
University of Missouri - St. Louis
Advisor: Professor Phil Fraundorf
Abstract
The effects of implantation of He and H into silicon wafers are studied using Transmission Electron Microscopy (TEM) experiments. The four samples are He and H implantation alone, He followed by H, and H followed by He. The damage layer has shown repeated dark contrast in both Bright Field and Dark Field imaging conditions, suggesting the contrast is not due to typical diffraction effects and is a result of a damaged lattice. The damage layer shows a texture of overlapping dark circles with diameters typically between 9-18 nm.
Zak Jost recently graduated from the UMSL Physics department and Pierre Laclede Honors College with a 4.0 GPA. He is originally from Troy, MO. Zak ultimately hopes to find an R&D job in industry and to eventually get an advanced degree in physics.
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