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Meredith Ordway
University of Missouri - St. Louis
Advisor: Dr. Phil Fraundorf
Abstract
In order to create Silicon on Insulator technology a process involving ion implantation of hydrogen and helium into the silicon wafer is used. This ion implantation causes strain within the atom layers of the silicon wafer. This study empirically determines the differences in strain caused by different implant conditions, including a change in temperature of implant, a change in current used for implantation, and a change in the dose of the implant. Comparisons were made using strain profiles and finding a percent difference between the maximum peak heights and corresponding strain areas between conditions compared. Changes in temperature from 15 oC to 25 oC showed a mean decrease of 1.5% in maximum peak height and a mean increase of 2% in strain area, consistent with ions being more mobile at higher temperatures. Changes from a current of 10 mA to 26 mA showed a mean increase of 3.76% and 1.75% in maximum peak height and area respectively. A 20% increase in dose showed a mean increase of 20% and 21.8% in maximum peak height and corresponding area respectively, suggesting that the strain is proportional to dose.
Meredith Ordway is from Jefferson City, Missouri. She currently resides in St. Louis Missouri and is attending the University of Missouri - St. Louis and is a member of the Pierre Laclede Honors College. She is a senior in the physics department and hopes to attain her bachelors of science in general physics in the next year. Her near term goal is to attend graduate school with the ultimate goal of specializing in biophysics research. She also hopes to continue studying the violin, which she has done for the past 12 years.
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